Method for fabricating a field effect transistor

Details Method for fabricating a field effect transistor Method for fabricating a field effect transistor

2007-05-01

2007-05-01

Nhu, Davud (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S197000, C438S142000, C257SE21008, C257S004000, C257S017000

Reexamination Certificate

active

11066330

ABSTRACT:
A method for fabricating a field effect transistor, in which, after the etching of the gate electrode, the removal of the etching mask is omitted since the etching mask serves as a gate dielectric. The etching mask or the dielectric has a self-assembled monolayer of an organic compound.

REFERENCES:
patent: 6713389 (2004-03-01), Speakman
patent: 6881490 (2005-04-01), Kambe et al.
Zhenan Boa, et al “Printable organic and polymeric semiconducting materials and devices”, J. Mater. Chem, 1999,9, pp. 1895-1904.
Marcus Halik, et al Relationship Between Molecules Structure and Electrical Performance of Oligothiophene Organic Thin Film Transistors, 2003 Wiley-vch Verlag GmbH & Co. pp. 917-922.
J. Collet, et al Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating films, 2000 American Institute of Physics, pp. 1941-1943.

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