Method for fabricating a field effect transistor

Details Method for fabricating a field effect transistor Method for fabricating a field effect transistor

1991-10-30

1993-08-31

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 40, 437912, 437203, H01L 21265

Patent

active

052408698

ABSTRACT:
A method for fabrication a field effect transistor having a T-shaped gate electrode in a stepped recess includes forming an active layer in a substrate, forming two spaced apart ohmic electrodes on the active layer, forming spaced apart first side wall films on side walls of and between the two ohmic electrodes, forming a first recess by etching the active layer using the first side wall films as a mask, forming spaced apart second side wall films in the first recess contacting the first side wall films, forming a second recess narrower than and within the first recess by etching the active layer using the second side wall films as a mask, and forming a T-shaped gate in the second recess in contact with the second side wall films.

REFERENCES:
patent: 4472872 (1984-09-01), Toyoda et al.
patent: 4889827 (1989-12-01), Willer
patent: 4981809 (1991-01-01), Mitsuaki et al.
patent: 5032541 (1991-07-01), Sakamoto et al.

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