Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Reexamination Certificate
2005-12-06
2005-12-06
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
C117S084000
Reexamination Certificate
active
06972049
ABSTRACT:
A process for making a diamond film with low surface roughness. A substrate is provided. A diamond layer is deposited on the substrate. A binder layer is coated over the diamond layer. A carrier plate is provided to join with the binder layer, thereby forming a laminate structure. The substrate is then removed, thereby obtaining a diamond film with a low surface roughness with respect to the surface roughness of the removed substrate.
REFERENCES:
patent: 5370944 (1994-12-01), Omori et al.
patent: 5952102 (1999-09-01), Cutler
patent: 6054183 (2000-04-01), Zimmer et al.
Fan Chin-Hon
Hsieh Chun-Hao
Liu Ping-Yin
Su Chien-Chang
Tsai Hung-Yin
Hiteshew Felisa
Industrial Technology Research Institute
Rabin & Berdo P.C.
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