Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1998-04-27
2000-05-23
Bowers, Charles
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438253, 438396, H01L 2120
Patent
active
060665416
ABSTRACT:
A method for fabricating a cylindrical capacitor is provided. This invention uses a composite structure composed of stacked barrier/scarificing/mask layers to prevent the contact plug of the capacitor from being attacked by wet etchants. An insulating layer is formed over a substrate having a source region, a drain region, and a gate electrode. Then a barrier layer, a sacrificing layer and a mask layer are sequentially formed over the insulating layer. Next, a contact hole is formed over the source region and spacers are formed on the sidewalls of the contact hole. After a storage electrode of the capacitor is formed and exposed portions of the mask layer are removed, the sacrificing layer is isotropically etched using the spacers and the barrier layer as stopping layers. Thereafter, a capacitor dielectric layer and an opposite electrode are formed over the storage electrode thereby completing the capacitor.
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Hsieh Ming-Teng
Lee Pei-Ying
Lin Tsu-An
Tsai Hsing-Chuan
Bednarek Michael D.
Bowers Charles
Nanya Technology Corporation
Pert Evan
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