Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2011-03-22
2011-03-22
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S254000, C257SE21648
Reexamination Certificate
active
07910452
ABSTRACT:
A method for fabricating a capacitor includes forming an isolation layer over a substrate. The isolation layer forms a plurality of open regions. Storage nodes are formed on surfaces of the open regions. An upper portion of the isolation layer is etched to expose upper outer walls of the storage nodes. A sacrificial layer is formed over the isolation layer to enclose the upper outer walls of the storage nodes. The isolation layer and the sacrificial layer are then removed.
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Kil Deok-Sin
Kim Jin-Hyock
Kim Young-dae
Lee Kee-jeung
Roh Jae-sung
Hynix / Semiconductor Inc.
Kilpatrick Townsend & Stockton LLP
Pham Thanh V
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