Method for fabricating a crown shaped capacitor structure

Details Method for fabricating a crown shaped capacitor structure Method for fabricating a crown shaped capacitor structure

1997-10-29

1999-07-20

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

257303, H01L 218242

Patent

active

059267194

ABSTRACT:
A method for creating an STC structure, using a crown shaped storage node structure, to increase surface area, and to increase the capacitance, for high density, DRAM designs, has been developed. The process features creating the crown shaped, storage node structure, using only two photolithographic masking procedures. An insulator mesa is formed on an underlying polysilicon layer, to provide a shape needed for creation of polysilicon spacers, connecting to the underlying polysilicon layer. Timed, anisotropic RIE procedures, applied to the underlying polysilicon layer, and selective removal of the insulator mesa, result in the formation of the crown shaped, storage node structure, comprised of polysilicon spacers, connected to, and extending upwards, from an underlying polysilicon shape.

REFERENCES:
patent: 5278091 (1994-01-01), Fazan et al.
patent: 5459095 (1995-10-01), Huang et al.
patent: 5766993 (1998-06-01), Tseng
patent: 5824582 (1998-10-01), Tseng
patent: 5843821 (1998-12-01), Tseng

Affiliated with

Also associated with

Rating

Method for fabricating a crown shaped capacitor structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a crown shaped capacitor structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a crown shaped capacitor structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1331062