Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1979-11-07
1981-12-22
Smith, John D.
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
427124, 4271263, 4271264, 4271266, 427250, 427 91, 204192C, H01L 21285
Patent
active
043071325
ABSTRACT:
Thin film structures comprising a layer of aluminum and a material having a tendency to interact with aluminum are separated by an intermediate layer of aluminum having a high aluminum oxide content. The intermediate layer prevents said interaction by acting as a diffusion barrier.
Preferred embodiments are directed to silicon semiconductor metallization structures, including Schottky barrier contacts, which comprise a bottom layer of tantalum, or other transition metal, or a metal silicide in contact with a silicon substrate, an intermediate layer of aluminum having a high aluminum oxide content and a top layer of aluminum. The intermediate layer functions as a diffusion barrier between aluminum and the metal, metal silicide or silicon. The preferred embodiments of the invention also includes the process for forming such structures preferably comprising: depositing pure tantalum under high vacuum in evaporation apparatus, substituting aluminum for tantalum in the evaporation apparatus and bleeding-in water, air or oxygen to form the aluminum oxide-rich intermediate aluminum layer and then returning to the high vacuum to deposit pure aluminum. The invention is also applicable to FET or CCD structures where a diffusion barrier for aluminum is required.
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Chu Wei-Kan
Howard James K.
White James F.
International Business Machines Corp.
Plantz Bernard
Scifo Paul C.
Smith John D.
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