Method for fabricating a contact hole

Details Method for fabricating a contact hole Method for fabricating a contact hole

2006-09-11

2009-06-09

Pham, Thanhha (Department: 2894)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S637000, C438S702000, C438S738000, C257SE21577

Reexamination Certificate

active

07544623

ABSTRACT:
A method for fabricating a contact hole is provided. A semiconductor substrate having thereon a conductive region is prepared. A dielectric layer is deposited on the semiconductor substrate and the conductive region. An etching resistive layer is coated on the dielectric layer. A silicon-containing hard mask bottom anti-reflection coating (SHB) layer is then coated on the etching resistive layer. A photoresist layer is then coated on the SHB layer. A lithographic process is performed to form a first opening in the photoresist layer. Using the photoresist layer as a hard mask, the SHB layer is etched through the first opening, thereby forming a shrunk, tapered second opening in the SHB layer. Using the etching resistive layer as an etching hard mask, etching the dielectric layer through the second opening to form a contact hole in the dielectric layer.

REFERENCES:
patent: 2006/0240639 (2006-10-01), Akiyama

Affiliated with

Also associated with

Rating

Method for fabricating a contact hole does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a contact hole, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a contact hole will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4076877