Method for fabricating a component having an electrical...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal

Reexamination Certificate

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C438S650000, C438S933000

Reexamination Certificate

active

07435605

ABSTRACT:
A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.

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