Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2007-07-09
2008-10-14
Menz, Douglas M (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S650000, C438S933000
Reexamination Certificate
active
07435605
ABSTRACT:
A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.
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Diepold Gudrun
Illek Stefan
Pietzonka Ines
Ploessl Andreas
Stauss Peter
Cohen Pontani Lieberman & Pavane LLP
Menz Douglas M
Osram Opto Semiconductors GmbH
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