Method for fabricating a compensated silicon pressure sensing de

Metal working – Piezoelectric device making

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29620, 296211, 73708, 73721, 73727, 73DIG4, 338 3, 338 4, 338 42, H01L 4122

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047666552

ABSTRACT:
A pressure sensing device including a single crystal of silicon configured to have a diaphram portion, a frame portion and associated circuitry formed on the crystal is described. Piezo-resistive elements on the boundary of the frame and the diaphram portions of the crystal respond to changes in pressure. The piezo-resistive elements, associated elements, and connecting conducting paths are formed by thin film and/or doping techniques to provide a monolithically integrated circuit. The elements are passive and require only application of input voltages and detection of output signals to provide an operative component. Trimmable resistors are provided for compensation and resistive adjustment, and at least one resistive element provides temperature compensation.

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patent: 4462018 (1984-07-01), Yang et al.
patent: 4622856 (1986-11-01), Binder et al.
Vaganov, V. I. et al., Measuring Technique (USA), vol. 23, No. 5, pp. 405-408; May 1980.
Allan, Roger; "Sensors In Silicon", High Technology, pp. 43-50, Sep. 1984.

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