Metal working – Piezoelectric device making
Patent
1986-10-24
1988-08-30
Hall, Carl E.
Metal working
Piezoelectric device making
29620, 296211, 73708, 73721, 73727, 73DIG4, 338 3, 338 4, 338 42, H01L 4122
Patent
active
047666552
ABSTRACT:
A pressure sensing device including a single crystal of silicon configured to have a diaphram portion, a frame portion and associated circuitry formed on the crystal is described. Piezo-resistive elements on the boundary of the frame and the diaphram portions of the crystal respond to changes in pressure. The piezo-resistive elements, associated elements, and connecting conducting paths are formed by thin film and/or doping techniques to provide a monolithically integrated circuit. The elements are passive and require only application of input voltages and detection of output signals to provide an operative component. Trimmable resistors are provided for compensation and resistive adjustment, and at least one resistive element provides temperature compensation.
REFERENCES:
patent: 4300395 (1981-11-01), Shirouzu et al.
patent: 4333349 (1982-06-01), Mallon et al.
patent: 4462018 (1984-07-01), Yang et al.
patent: 4622856 (1986-11-01), Binder et al.
Vaganov, V. I. et al., Measuring Technique (USA), vol. 23, No. 5, pp. 405-408; May 1980.
Allan, Roger; "Sensors In Silicon", High Technology, pp. 43-50, Sep. 1984.
Burr-Brown Corporation
Hall Carl E.
LandOfFree
Method for fabricating a compensated silicon pressure sensing de does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating a compensated silicon pressure sensing de, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a compensated silicon pressure sensing de will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2080402