Method for fabricating a CMOS image sensor

Details Method for fabricating a CMOS image sensor Method for fabricating a CMOS image sensor

2007-09-11

2007-09-11

Menz, Douglas M. (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S048000

Reexamination Certificate

active

11025379

ABSTRACT:
A method for fabricating a complementary metal-oxide semiconductor (CMOS) image sensor is disclosed. An example method forms a metal pad in a pad area of a substrate having an active area and a pad area defined thereon, forms a protective layer on an entire surface of the substrate including the metal pad and selectively removing the protective layer to open the metal pad, and forms a barrier layer having a predetermined thickness on the entire surface of the substrate including the opened metal pad. Additionally, the exampled method forms red, green, and blue color filter layers on the barrier layer corresponding to the active area, forms a micro-lens over each of the color filter layers, and removes the barrier layer on the pad area.

REFERENCES:
patent: 6506619 (2003-01-01), Chen et al.
patent: 10-2000-0003929 (2000-01-01), None
patent: 10-2003-0073985 (2003-09-01), None
Jao Gap Kim; Method for Fabricating Semiconductor Device for Image Sensor; Korean Patent Abstracts; KR 1020030073985 A; Sep. 19, 2003; Donghu Electronics Co., Ltd.
Seong Cheol Bylin; Method for Manufacturing an Image Sensor for Protecting a Surface of Pad Metal; KR 1020000003929 A; Jan. 25, 2000; Hyundai Electronics Inc. Co, Ltd.

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