Method for fabricating a circuit device

Details Method for fabricating a circuit device Method for fabricating a circuit device

2006-11-28

2006-11-28

Norton, Nadine (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S110000, C438S118000, C438S126000, C438S455000, C438S124000

Reexamination Certificate

active

07141509

ABSTRACT:
A method for fabricating a circuit device includes preparing a laminating sheet comprising a conductive film, insulation resin formed on the surface of the conductive film, and a first conductive path layer formed on the surface of the insulation resin. Semiconductor elements are adhered and fixed on the first conductive path layer. A sealing resin is provided as an overcoat to the first conductive path layer and the semiconductor elements. The method includes forming a second conductive path layer by etching the conductive film into a predetermined pattern and forming an external electrode at predetermined points of the second conductive path layer.

REFERENCES:
patent: 5777391 (1998-07-01), Nakamura et al.
patent: 5976912 (1999-11-01), Fukutomi et al.
patent: 6338985 (2002-01-01), Greenwood
patent: 6562660 (2003-05-01), Sakamoto et al.
Webster'II New Riverside University Dictionary, Copyright 1984, 1988 by Houghton Miffin Company.

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