Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2011-03-22
2011-11-01
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S254000, C257SE21648
Reexamination Certificate
active
08048758
ABSTRACT:
A method for fabricating a capacitor includes forming an isolation layer over a cell region and a peripheral region of a substrate. The isolation layer forms a plurality of open regions in the cell region. Storage nodes are formed on surfaces of the open regions. A sacrificial pattern is formed over the isolation layer and covers the cell region. The isolation layer is etched in the peripheral region to expose side portions of the resulting structure obtained after forming the sacrificial pattern in the cell region. With the sacrificial pattern supporting the storage nodes, the isolation layer in the cell region is removed. The sacrificial pattern is then removed.
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Kil Deok-Sin
Kim Jin-Hyock
Kim Young-Dae
Lee Kee-Jeung
Roh Jae-Sung
Hynix / Semiconductor Inc.
Kilpatrick Townsend & Stockton LLP
Pham Thanh V
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