Method for fabricating a capacitor structure

Details Method for fabricating a capacitor structure Method for fabricating a capacitor structure

2006-03-14

2008-09-09

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S399000, C438S740000

Reexamination Certificate

active

07422954

ABSTRACT:
A capacitor structure is described, including a substrate, a first metal layer in the substrate, an etching stop layer on the substrate having therein an opening that exposes a portion of the first metal layer, a connection layer on the portion of the first metal layer, the sidewall of the opening and a portion of the etching stop layer, a second metal layer over the connection layer, and an insulating layer between the second metal layer and the connection layer.

REFERENCES:
patent: 6329234 (2001-12-01), Ma et al.
patent: 6410386 (2002-06-01), Hsue et al.
patent: 6492226 (2002-12-01), Hsue et al.
patent: 6500724 (2002-12-01), Zurcher et al.
patent: 6583491 (2003-06-01), Huang et al.
patent: 6759703 (2004-07-01), Matsuhashi
patent: 6916722 (2005-07-01), Huang et al.
patent: 6958509 (2005-10-01), Korner et al.
patent: 7038266 (2006-05-01), Wang
patent: 7071054 (2006-07-01), Park
patent: 7160772 (2007-01-01), Coolbaugh et al.
patent: 7250334 (2007-07-01), Crenshaw et al.
patent: 2003/0027385 (2003-02-01), Park et al.
patent: 2004/0106266 (2004-06-01), Huang et al.
patent: 2004/0256654 (2004-12-01), Korner et al.
patent: 2005/0024979 (2005-02-01), Kim et al.
patent: 2005/0189577 (2005-09-01), Wang
patent: 2006/0223276 (2006-10-01), Lin et al.

Affiliated with

Also associated with

Rating

Method for fabricating a capacitor structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a capacitor structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a capacitor structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3975559