Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2008-09-09
2008-09-09
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S399000, C438S740000
Reexamination Certificate
active
11308237
ABSTRACT:
A capacitor structure is described, including a substrate, a first metal layer in the substrate, an etching stop layer on the substrate having therein an opening that exposes a portion of the first metal layer, a connection layer on the portion of the first metal layer, the sidewall of the opening and a portion of the etching stop layer, a second metal layer over the connection layer, and an insulating layer between the second metal layer and the connection layer.
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Jianq Chyun IP Office
Thomas Toniae M.
United Microelectronics Corp.
Wilczewski M.
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