Method for fabricating a capacitor in a semiconductor device

Details Method for fabricating a capacitor in a semiconductor device Method for fabricating a capacitor in a semiconductor device

2006-05-09

2006-05-09

Thai, Luan (Department: 2891)

Semiconductor device manufacturing: process

Making passive device

C438S386000, C438S329000, C438S239000

Reexamination Certificate

active

07041565

ABSTRACT:
A method for fabricating a capacitor in a semiconductor device that includes providing a semiconductor substrate, forming at least one shallow trench isolation structure in the semiconductor substrate, forming a tunnel oxide layer over the semiconductor substrate, depositing a first polysilicon layer over the tunnel oxide layer, depositing a nitride layer over the first polysilicon layer, depositing a first photoresist over the nitride layer, patterning and defining the first photoresist layer to expose at least a portion of the nitride layer, etching the exposed portion of the nitride layer and the first polysilicon layer underneath the exposed portion of the nitride layer to expose at least a portion of the tunnel oxide layer, removing the patterned and defined photoresist layer, forming a second oxide layer over at least the exposed portion of the tunnel oxide layer, providing a second photoresist layer over the second oxide layer, providing an etchback process to remove a portion of the second photoresist layer and a potion of the nitride layer, removing the residual second photoresist layer and the residual nitride layer to expose at least a portion of the first polysilicon layer, and forming and patterning a second polysilicon layer over at least the exposed portion of the first polysilicon layer.

REFERENCES:
patent: 5392189 (1995-02-01), Fazan et al.
patent: 6214667 (2001-04-01), Ding et al.
patent: 6285053 (2001-09-01), Park
patent: 6383863 (2002-05-01), Chiang et al.
patent: 6872622 (2005-03-01), Tu

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