Method for fabricating a capacitor in a dynamic random access me

Details Method for fabricating a capacitor in a dynamic random access me Method for fabricating a capacitor in a dynamic random access me

1998-06-24

2000-07-04

Trinh, Michael

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438240, 438253, 438397, H01L 2120

Patent

active

060838043

ABSTRACT:
The invention is a method for fabricating a capacitor in a dynamic random access memory. The capacitor has double cylinder structure and is fabricated by utilizing an insulating side wall spacer to pre-define the capacitor structure. Then, a wet etching process is applied to remove the insulating side wall spacer and expose a surface of a structured lower electrode. Then, a dielectric thin film and an upper electrode are formed over the surface of the lower electrode sequentially to form the capacitor.

REFERENCES:
patent: 5432116 (1995-07-01), Keum et al.
patent: 5543346 (1996-08-01), Keum et al.
patent: 5721168 (1998-02-01), Wu
patent: 5837594 (1997-06-01), Honma et al.
patent: 5953618 (1996-10-01), Choi
patent: 5981337 (1999-11-01), Chuang
patent: 5998259 (1999-12-01), Chuang

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