Semiconductor device manufacturing: process – Making passive device – Trench capacitor
Reexamination Certificate
2005-04-12
2005-04-12
Lebentritt, Michael S. (Department: 2824)
Semiconductor device manufacturing: process
Making passive device
Trench capacitor
C438S389000, C438S532000
Reexamination Certificate
active
06878601
ABSTRACT:
Described is a method for fabricating a capacitor of a semiconductor device. The method includes the steps of forming an insulating interlayer including a storage node contact hole on a semiconductor substrate, forming a polysilicon layer on the insulating interlayer including the storage node contact hole, and forming a sacrificial resist layer on the polysilicon layer, thereby filling the storage node contact hole with the sacrificial resist layer. Also, the method includes the steps of selectively removing the sacrificial resist layer in such a manner that the sacrificial resist layer remains only in the storage node contact hole, implanting ions into an upper surface of an exposed upper surface of the polysilicon layer, oxidizing an ion-implanted portion of the polysilicon layer after removing a remaining sacrificial resist layer, growing an MPS layer on a surface of the polysilicon layer after removing an oxidized portion of the polysilicon layer, and forming a dielectric layer and an upper electrode on the polysilicon layer including the MPS layer. It is possible to grow MPS without interference of a carbon component generated during the etch back process, which is performed to form a cylinder capacitor by using storage node polysilicon.
REFERENCES:
patent: 6309975 (2001-10-01), Wu et al.
patent: 6319788 (2001-11-01), Gruening et al.
patent: 6432795 (2002-08-01), Lee
patent: 6461967 (2002-10-01), Wu et al.
patent: 6541334 (2003-04-01), Luetzen et al.
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Lebentritt Michael S.
Owens Beth E.
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