Method for fabricating a bipolar transistor with a base layer ha

Fishing – trapping – and vermin destroying

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437 89, 437 90, 437 99, 437131, H01L 21265

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056482809

ABSTRACT:
A base region structure involved in a bipolar transistor, wherein the base region comprises a compound semiconductor epitaxial layer formed in a recessed portion provided by etching in an upper region of the semiconductor substrate and the recessed portion has a depth corresponding to a thickness of the compound semiconductor epitaxial layer so that the base region has a top surface positioned at the same level as a top surface of the semiconductor substrate.

REFERENCES:
patent: 4910164 (1990-03-01), Shichijo
patent: 5137840 (1992-08-01), Desilets et al.

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