Method for fabricating a bipolar transistor base

Details Method for fabricating a bipolar transistor base Method for fabricating a bipolar transistor base

2005-08-09

2005-08-09

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S350000, C438S508000

Reexamination Certificate

active

06927140

ABSTRACT:
A method for forming a base of a bipolar transistor. A narrow base is formed using a flash of boron doping gas in a reaction chamber to create a narrow base with high boron concentration. This method allows for reliable formation of a base with high boron concentration while maintaining manageability in controlling deposition of other materials in a substrate.

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H.J. Osten, D. Knoll, B. Heinemann, H. Rucker, and B. Tillack, “Carbon Doped SiGe Heterojunction Bipolar Transistors for High Frequency Applications,” Institute for Semiconductor Physics (IHP), 1999, pp. 109-116, Walter-Korsing-Str. 2, D-15230 Frankfurt (Oder), Germany.

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