Method for fabricating a bipolar transistor

Details Method for fabricating a bipolar transistor Method for fabricating a bipolar transistor

2005-02-15

2005-02-15

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S360000

Reexamination Certificate

active

06855612

ABSTRACT:
A method for producing bipolar transistors with the aid of selective epitaxy for producing a collector and base. The method includes widening the area of the base either by the isotropic etching of the conductive layer or by the oxidation of the conductive layer and by the subsequent removal of the oxide layer. This widening of the area of the base prevents the occurrence of short-circuits between the emitter and the collector during the subsequent production of the base.

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