Method for fabricating a bipolar transistor

Details Method for fabricating a bipolar transistor Method for fabricating a bipolar transistor

1995-06-07

1996-11-05

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437126, 437128, 437133, 148DIG72, H01L 21265

Patent

active

055717322

ABSTRACT:
In one form of the invention, a bipolar transistor is disclosed, the transistor comprising a GaAs substrate in the (111) orientation 100, and an InGaAs region 106 over the substrate 100, the InGaAs region 106 having a first surface and a second surface, wherein the mole fraction of In in the InGaAs region 106 varies from said first surface to said second surface.

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patent: 5098858 (1992-03-01), Ueno et al.
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patent: 5171697 (1992-12-01), Liu et al.
patent: 5286997 (1994-02-01), Hill
patent: 5351128 (1994-09-01), Goto et al.
T. S. Moise, et al., "Optical Properties of Strained Layer (111) B Al.sub.0.15 Ga.sub.0.85 As-In.sub.0.04 Ga.sub.0.96 As Quantum Well Heterostructures", Journal of Electronic Materials, vol. 21, No. 1, 1992, pp. 119-124.
M. H. Lee, "Orientation Dependence of Breakdown Voltage in GaAs", Solid-State electronics, vol. 23, pp. 1007-1009, 1980.

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