Fishing – trapping – and vermin destroying
Patent
1985-12-02
1987-10-27
Hearn, Brian E.
Fishing, trapping, and vermin destroying
148DIG110, 148DIG17, 156653, 156643, 437186, H01L 21316
Patent
active
047019980
ABSTRACT:
A method for fabricating a bipolar transistor having a base doping variation of less than 20% is disclosed. A polysilicon base contact bipolar transistor is formed up to the point just prior to the intrinsic base-emitter formation. The intrinsic base-emitter opening is then reactive ion etched through the polysilicon base contact layer down to and into a single crystal silicon body thereunder, whereby the surface of the single crystal silicon is damaged. A silicon dioxide layer is then grown on the exposed and damaged single crystal silicon to convert the damaged silicon surface into a silicon dioxide layer. The silicon dioxide layer is removed by chemical etching to expose undamaged single crystal silicon. A screen silicon dioxide layer 50 to 500 .ANG..+-.10%, e.g., 180 .ANG., is then formed on the thus exposed undamaged single crystal silicon. The intrinsic base region is then formed by ion implantation through the screen silicon dioxide layer, the emitter region is formed within the intrinsic base region and electrical contact is made to the various elements of the bipolar transistor.
REFERENCES:
patent: 4305760 (1981-12-01), Trudel
Beyer et al., "Elimination of Stacking Faults" in IBM Tech. Dis. Bull., vol. 19, No. 8, Jan. 1977, p. 3051.
Manzi et al., "RIE . . . " in IBM Tech. Dis. Bull., vol. 25, No. 11A, Apr. 1983, pp. 85744-85745.
Lifshitz, N., "Study of Breakdown . . . " in J. Electrochem. Soc., Jul. 1983, pp. 1549-1550.
Jackson, Jr., "Advanced Epitaxial Processes . . . ," in Transactions of the Metallurgical Society of AIME, vol. 233, Mar. 1965, pp. 596-602.
Ahlgren David C.
Bendernagel Robert E.
Lange Russell C.
Revitz Martin
Hearn Brian E.
International Business Machines - Corporation
Quach T. N.
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