Method for fabricating a beam pressure sensor employing dielectr

Details Method for fabricating a beam pressure sensor employing dielectr Method for fabricating a beam pressure sensor employing dielectr

1995-05-23

1996-08-06

Thomas, Tom

Fishing, trapping, and vermin destroying

437228, 437901, 437974, 148DIG12, H01L 213205

Patent

active

055433499

ABSTRACT:
A pressure transducer comprising at least one diaphragm formed in a wafer of semiconducting material, the at least one diaphragm being spaced from a first surface of the wafer, a first layer of semiconducting material disposed over the at least one diaphragm, the first layer forming at least one resonating beam over the at least one diaphragm, and a plurality of resistor elements formed from a third layer of semiconducting material disposed over the at least one resonating beam, and isolation means for dielectrically isolating the at least one resonating beam from the at least one diaphragm.

REFERENCES:
patent: 4975390 (1990-12-01), Fujii et al.
patent: 5002901 (1991-03-01), Kurtz et al.
patent: 5286671 (1994-02-01), Kurtz et al.
A Balanced Dual-Diaphram Resonant Pressure Sensor in Silicon, IEEE Transactions on Electron Devices, vol. 37, No. 3, pp. 648-653 dated Mar. 1990 by Stemme, et al.
Resonant Beam Pressure Sensor Fabricated with Silicon Fusion Bonding, IEEE, pp. 664-667, dated May 1991 to Peterson, et al.

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