Method for exposing a photosensitive resist layer with...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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C438S689000, C438S942000, C134S001300

Reexamination Certificate

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06869737

ABSTRACT:
In a method for exposing a photosensitive resist layer with near-field light, a liquid film layer is provided between the photosensitive resist layer and a photomask. The photomask has a light-shielding film containing an opening portion through which a propagated light emitted from a light source cannot pass. The photosensitive resist layer is exposed with near-field light through the opening portion and the liquid film layer.

REFERENCES:
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“A Novel Fabrication Technology For Smooth 3D Inclined Polymer Microstructures With Adjustable Angles”; Hung et. al.; (2003'); Transducers '03, International Conference On Solid State Sensors, Actuators and Microsystems, abstract only.*
J. Goodberlet et al., “Patterning Sub-50 nm Features with Near-Field Embedded-Amplitude Masks”, Applied Physics Letters, vol. 81, No. 7, Aug. 12, 2002, pp. 1315 and 1317.
M.M. Alkaisi et al., “Optical Near Field Nanolithography”, AAPPS Bulletin vol. 11, No. 3, 2001, p. 10-14.

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