Method for exposing a pattern on an object by a charged particle

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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25049223, H01J 37302

Patent

active

053491971

ABSTRACT:
A method for exposing a pattern of a semiconductor device on an object comprises the steps of extracting block exposure data from design data the semiconductor device, extracting variable exposure data from the design data, extracting fine exposure data from the variable exposure data such that the fine exposure data comprises exposure data for fine elemental patterns that have a size smaller than a predetermined threshold size below which exposure by a variable shaped beam is difficult, extracting mask data indicative of a construction of a beam shaping mask used for shaping the beam based upon the block exposure data, variable exposure data and the fine exposure data, such that the mask data includes information about location, size and shape of apertures formed on the beam shaping mask for shaping the beam, fabricating the beam shaping mask based upon the mask data, and exposing the device pattern by selectively passing the beam through one of the block apertures, the variable exposure aperture and the fine aperture based upon block exposure data, the variable exposure data and the fine exposure data.

REFERENCES:
patent: 4021674 (1977-05-01), Koops
patent: 4213053 (1980-07-01), Pfeiffer
patent: 4469950 (1984-09-01), Taylor et al.
patent: 5051556 (1991-09-01), Sakamoto et al.
patent: 5173582 (1992-12-01), Sakamoto et al.
patent: 5175435 (1992-12-01), Sakamoto et al.

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