Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1992-09-29
1994-09-20
Anderson, Bruce C.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
25049223, H01J 37302
Patent
active
053491971
ABSTRACT:
A method for exposing a pattern of a semiconductor device on an object comprises the steps of extracting block exposure data from design data the semiconductor device, extracting variable exposure data from the design data, extracting fine exposure data from the variable exposure data such that the fine exposure data comprises exposure data for fine elemental patterns that have a size smaller than a predetermined threshold size below which exposure by a variable shaped beam is difficult, extracting mask data indicative of a construction of a beam shaping mask used for shaping the beam based upon the block exposure data, variable exposure data and the fine exposure data, such that the mask data includes information about location, size and shape of apertures formed on the beam shaping mask for shaping the beam, fabricating the beam shaping mask based upon the mask data, and exposing the device pattern by selectively passing the beam through one of the block apertures, the variable exposure aperture and the fine aperture based upon block exposure data, the variable exposure data and the fine exposure data.
REFERENCES:
patent: 4021674 (1977-05-01), Koops
patent: 4213053 (1980-07-01), Pfeiffer
patent: 4469950 (1984-09-01), Taylor et al.
patent: 5051556 (1991-09-01), Sakamoto et al.
patent: 5173582 (1992-12-01), Sakamoto et al.
patent: 5175435 (1992-12-01), Sakamoto et al.
Sakamoto Kiichi
Yasuda Hiroshi
Anderson Bruce C.
Fujitsu Limited
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