Method for examining a wafer with regard to a contamination...

Details Method for examining a wafer with regard to a contamination... Method for examining a wafer with regard to a contamination...

2011-06-07

2011-06-07

Young, Christopher G (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

C430S311000, C430S330000, C355S030000, C355S067000, C355S073000, C355S077000

Reexamination Certificate

active

07955767

ABSTRACT:
A method for examining at least one wafer (13) with regard to a contamination limit, in which the contamination potential of the resist (13a) of the wafer (13), which resist (13a) outgasses contaminating substances, is examined with regard to a contamination limit before the wafer (13) is exposed in an EUV projection exposure system (1). The method preferably includes: arranging the wafer (13) and/or a test disc coated with the same resist (13a) as the resist (13a) of the wafer (13) in a vacuum chamber (19), evacuating the vacuum chamber (19), and measuring the contamination potential of the contaminating substances outgassed from the wafer (13) in the evacuated vacuum chamber (19), and also comparing the contamination potential of the wafer (13) with a contamination limit. An EUV projection exposure system (1) for carrying out the method is also disclosed. By rejecting wafers having an especially high contamination risk, the contamination of optical elements in the projection exposure system (1) on wafer exposure may be distinctly reduced.

REFERENCES:
patent: 6842221 (2005-01-01), Shiraishi
patent: 7781157 (2010-08-01), Breyta et al.
patent: 2010/0112494 (2010-05-01), Kraus et al.
patent: 1455233 (2004-09-01), None
patent: 2413645 (2005-11-01), None
patent: 2008/034582 (2008-03-01), None
G. Denbeaux et al. “Quantitative Measurement of EUV resist outgassing” 23rd European Mask and Lithography Conference, Proceedings of SPIE, vol. 6533, May 3, 2007, pp. 653318-1-653318-5, online.
J. J. Santillan et al. “A study of EUV resist outgassing characteristics using a novel outgas analysis system” Advances in Resist Materials and Processing Technology XXIV: Proceedings of SPIE, vol. 6519, Mar. 22, 2007, pp. 651944-1-651944-7, online.
T. Watanabe et al. “Novel evaluation system for extreme ultraviolet lithography resist in NewSUBARU” Japanese Journal of Applied Physics, vol. 44, No. 7B, Jul. 26, 2005, pp. 5556-5559, online.

Affiliated with

Also associated with

Rating

Method for examining a wafer with regard to a contamination... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for examining a wafer with regard to a contamination..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for examining a wafer with regard to a contamination... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2703130