Method for evaluating surface state of silicon wafer

Radiant energy – Invisible radiant energy responsive electric signalling – Infrared responsive

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

356244, G01J 342

Patent

active

053212649

ABSTRACT:
A method for evaluating the surface state of a silicon wafer is here disclosed which comprises the steps of directly bringing an internal reflection element having a larger refractive index than that of silicon into close contact with the surface of the silicon wafer, selecting a light source having a wave length range which compounds present on the surface can absorb, entering light having a larger incident angle than critical angle from the light source into the element, and then evaluating a chemical bond state on the surface containing impurities or impure atoms by means of a multi-reflection method.

REFERENCES:
patent: 3850508 (1974-11-01), Sittig et al.
patent: 4211488 (1980-07-01), Kleinknecht
patent: 4291990 (1981-09-01), Takasu
patent: 4352016 (1982-09-01), Duffy et al.
patent: 4468136 (1984-08-01), Murphy et al.
patent: 4547073 (1985-10-01), Kugimiya
patent: 4652757 (1987-03-01), Carver
patent: 4862000 (1989-08-01), Kubota et al.
patent: 4953983 (1990-09-01), Bottka et al.
patent: 5042952 (1991-08-01), Opsal et al.
patent: 5185640 (1993-02-01), Wilks, Jr. et al.
patent: 5214286 (1993-05-01), Milosevic et al.
Japanese Journal of Applied Physics, vol. 27, No. 8 (Aug. 1988).
Journal of Applied Physics, vol. 64, No. 7 (Oct. 1988).
Journal of Applied Physics, vol. 66, No. 3 (Aug. 1989).
Applied Physics Letters, vol. 53, No. 20 (Nov. 1988).
Applied Physics Letters, vol. 56, No. 7 (Feb. 1990).
Physical Review B-Condensed Matter, vol. 42, No. 11, Third Series (Oct. 1990).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for evaluating surface state of silicon wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for evaluating surface state of silicon wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for evaluating surface state of silicon wafer will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1251122

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.