Radiant energy – Invisible radiant energy responsive electric signalling – Infrared responsive
Patent
1992-07-20
1994-06-14
Dzierzynski, Paul M.
Radiant energy
Invisible radiant energy responsive electric signalling
Infrared responsive
356244, G01J 342
Patent
active
053212649
ABSTRACT:
A method for evaluating the surface state of a silicon wafer is here disclosed which comprises the steps of directly bringing an internal reflection element having a larger refractive index than that of silicon into close contact with the surface of the silicon wafer, selecting a light source having a wave length range which compounds present on the surface can absorb, entering light having a larger incident angle than critical angle from the light source into the element, and then evaluating a chemical bond state on the surface containing impurities or impure atoms by means of a multi-reflection method.
REFERENCES:
patent: 3850508 (1974-11-01), Sittig et al.
patent: 4211488 (1980-07-01), Kleinknecht
patent: 4291990 (1981-09-01), Takasu
patent: 4352016 (1982-09-01), Duffy et al.
patent: 4468136 (1984-08-01), Murphy et al.
patent: 4547073 (1985-10-01), Kugimiya
patent: 4652757 (1987-03-01), Carver
patent: 4862000 (1989-08-01), Kubota et al.
patent: 4953983 (1990-09-01), Bottka et al.
patent: 5042952 (1991-08-01), Opsal et al.
patent: 5185640 (1993-02-01), Wilks, Jr. et al.
patent: 5214286 (1993-05-01), Milosevic et al.
Japanese Journal of Applied Physics, vol. 27, No. 8 (Aug. 1988).
Journal of Applied Physics, vol. 64, No. 7 (Oct. 1988).
Journal of Applied Physics, vol. 66, No. 3 (Aug. 1989).
Applied Physics Letters, vol. 53, No. 20 (Nov. 1988).
Applied Physics Letters, vol. 56, No. 7 (Feb. 1990).
Physical Review B-Condensed Matter, vol. 42, No. 11, Third Series (Oct. 1990).
Abe Takao
Kuwabara Susumu
Dzierzynski Paul M.
Hanig Richard
Shin-Etsu Handotai & Co., Ltd.
LandOfFree
Method for evaluating surface state of silicon wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for evaluating surface state of silicon wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for evaluating surface state of silicon wafer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1251122