Method for evaluating semiconductor wafer, apparatus for...

Measuring and testing – Surface and cutting edge testing – Roughness

Reexamination Certificate

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Reexamination Certificate

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07810383

ABSTRACT:
The present invention provides a method for evaluating nanotopography of a surface of a semiconductor wafer sliced from a semiconductor ingot, the method being conducted prior to polishing of the surface, the method at least comprising: measuring a surface profile of the wafer in the direction that the wafer is sliced; determining a maximum inclination value of warp change of the wafer surface in a sectional profile in the direction that the wafer is sliced of the measured surface profile; and estimating nanotopography of the wafer surface after being polished based on the determined maximum value. As a result, there are provided a method and an apparatus for evaluating nanotopography of a surface of a semiconductor wafer, and a method for manufacturing a semiconductor wafer exhibiting good nanotopography level on the surface.

REFERENCES:
patent: 6709981 (2004-03-01), Grabbe et al.
patent: 2003/0170948 (2003-09-01), Bhagavat et al.
patent: 2004/0215418 (2004-10-01), Kobayashi et al.
patent: A 7-106387 (1995-04-01), None
patent: A 11-287630 (1999-10-01), None
patent: A 2002-538447 (2002-11-01), None
patent: A 2003-086646 (2003-03-01), None
patent: A 2004-020286 (2004-01-01), None
patent: A 2004-214505 (2004-07-01), None
patent: A 2004-216485 (2004-08-01), None
patent: WO 00/52420 (2000-09-01), None

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