Data processing: measuring – calibrating – or testing – Testing system – Of mechanical system
Reexamination Certificate
2008-07-01
2008-07-01
Lau, Tung S (Department: 2863)
Data processing: measuring, calibrating, or testing
Testing system
Of mechanical system
Reexamination Certificate
active
11037105
ABSTRACT:
Spectrum data of white neutrons having different spectrum shapes, and SEE counts obtained by a white neutron method using this multiple spectrum data, are stored. A computing section reads out the spectrum data, divides the data into energy groups, and calculates and stores a total flux of each energy group. Furthermore, the computing section reads out the SEE counts with respect to each of the spectrum data and the total flux of each energy group, substitutes the SEE counts and the total flux into a simultaneous equation, and calculates the SEE cross section for each of the energy groups. Subsequently, the computing section calculates parameters which determine a formula of the approximate function of the SEE cross section as a function of energy, so that computed values of error counts obtained by integration of multiple spectra and the approximate function sufficiently match the actual measured values thereof.
REFERENCES:
patent: 2001-215255 (2001-08-01), None
patent: 2004-125633 (2004-04-01), None
patent: 2004-138529 (2004-05-01), None
patent: 2004-251813 (2004-09-01), None
Impact of Neutron flux on Soft Errors in MOS Memories, Akira Eto, IEEE 1998, 4 pages.
Self-consistent Integrated System for Susceptibility to Terrestrial Neutron Induced, Soft-Error of Sub-quarter Micron Memory Devices, Yasuo Yahagi (yaha˜˜perl.hitachi.eo.jpE),i shi Ibe, Production Engineering Research Laboratory, Hitachi Ltd., IEEE 2002, p. 143-146.
“Single-Event Upsets in Microelectronics: Fundamental Physics and Issues”; Henry H.K. Tang et al., MRS Bulletin; Feb. 2003; pp. 111-116.
“Self-consistent Integrated System for Susceptibility to Terrestrial Neutron Induced Soft-Error of Sub-quarter Micron Memory Devices”; Yasuo Yahagi et al.; 2002 IRW Final Report; pp. 143-146.
“A Comparative Study Between Two Neutron Facilities Regarding SEU”; Thomas Granlund et al., Proceedings of RADECS 2003: Radiation and its Effects on Components and Systems, Noordwijk, The Netherlands, Sep. 15-19, 2003; pp. 493-497.
IBM J.Res.Devel., vol. 40, No. 1, “Terrestrial cosmic rays”, Zeigler et al, pp. 19-39, 1996.
IEEE Transactions on Nuclear Science, vol. 45, No. 6, Effect of Ion Energy Uon Dielectric Breakdown of Capacitor Response in Vertical Power MOSFETs, pp. 2492-2499, 1998.
IEEE Transactions on Nuclear Science, vol. 47, No. 6, “The impact of single event gate rupture in linear devices”, pp. 2373-2379, 2000.
IEEE Transactions on Nuclear Science, vol. 47, No. 6, “Analysis of SEB and SEGR in super-junction MOSFETs”, pp. 2640-2647, 2000.
“Impact of Neutron flux on soft errors in MOS memories”, 1998.
Nuclear Science and Engineering, vol. 106, “The Los Alamos National Library Spallation Neutron Sources”, pp. 208-218, 1990.
ICITA 2002.
Ibe Hidefumi
Kameyama Hideaki
Yahagi Yasuo
Lau Tung S
Mattingly ,Stanger ,Malur & Brundidge, P.C.
Renesas Technology Corp.
LandOfFree
Method for evaluating semiconductor device error and system... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for evaluating semiconductor device error and system..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for evaluating semiconductor device error and system... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3928688