Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Reexamination Certificate
2006-09-26
2006-09-26
Patel, Paresh (Department: 2829)
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
C716S030000, C716S030000, C702S064000, C702S065000, C702S117000
Reexamination Certificate
active
07112982
ABSTRACT:
It is an object of the present invention to provide a method for evaluating a semiconductor device including a semiconductor, an insulator, and a conductor.The present invention has a first step of applying a voltage to a conductor to measure a current value, a second step of dividing the current value by an area of a region in which a semiconductor is overlapped with the conductor to calculate a current density Jg, and a third step of calculating a depletion layer edge leakage current and an in-plane leakage current by using coefficients of a formula Jg=2A/r+B (A and B are respectively constants) that has a reciprocal of the radius r and the current density Jg. Alternatively, the present invention has the first step, the second step, and another third step of using coefficients of a formula Jg=A/W+B/L+C (A, B, and C are respectively constants) that has reciprocals of a channel width W and a channel length L of the semiconductor and the current density Jg to calculate a depletion layer edge leakage current, an in-plane leakage current, and a silicon edge leakage current.
REFERENCES:
patent: 6922643 (2005-07-01), Takakamo et al.
patent: 7019545 (2006-03-01), Kang et al.
E.H. Nicollian and J.R. Brews, “Avalanche Breakdown and Tunneling,” MOS (Metal Oxide Semiconductor) Physics and Technology, Wiley-Interscience, 1981, p. 378.
Asano Etsuko
Honda Tatsuya
Patel Paresh
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Velez Roberto
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