Optics: measuring and testing – By dispersed light spectroscopy – With sample excitation
Patent
1997-02-14
1998-11-24
McGraw, Vincent P.
Optics: measuring and testing
By dispersed light spectroscopy
With sample excitation
356300, G01N 2164
Patent
active
058415327
ABSTRACT:
A method and apparatus for evaluating an oxygen concentration in a semiconductor silicon single crystal highly doped with boron at a low cost with a high sensitivity and high reproducibility. The single crystal, which is doped with boron of a high concentration of 10.sup.17 atoms/cm.sup.3 or higher, is irradiated with a light having a greater energy than that of bandgap of the semiconductor silicon while holding the single crystal at a temperature of room temperature to 50 K and photoluminescence intensities in the vicinity of a photon energy of 0.96 eV of a photoluminescence spectrum emitted from the single crystal under the above irradiation are measured to evaluate an oxygen concentration in the single crystal.
REFERENCES:
patent: 4429047 (1984-01-01), Jastrzebski et al.
Y. Kitagawara, et al., "Evaluation of Oxygen Precipitated Silicon Crystals by Deep-Level Photoluminescence at Room Temperature and Its Mapping", Journal of the Electrochemical Society, Aug. 1992, vol. 139, No. 8, pp. 2277-2281.
K. Terashima, et al., "Photoluminescence of Ring-Distribution of Oxygen Precipitates in Czochralski Silicon", Materials Science Forum, 1995, vol. 196-201, pp. 1129-1134.
M. Nakamura, et al., "Photoluminescence Measurement of Carbon in Silicon Crystal Irradiated with High Energy Electrons", Journal of the Electrochemical Society, Dec. 1994, vol. 141, No. 12, pp. 3576-3580.
M. Tajima, "Infrared Microscopic Photoluminescence Mapping on Semiconductors at Low-Temperatures", Institute of Physics Conference Series, 1996, vol. 149, pp. 243-249.
Kitagawara Yutaka
Yoshida Tomosuke
McGraw Vincent P.
Shin-Etsu Handotai & Co., Ltd.
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