Semiconductor device manufacturing: process – With measuring or testing
Patent
1997-05-01
2000-02-22
Tsai, Jey
Semiconductor device manufacturing: process
With measuring or testing
438466, 438459, 438977, H01L 2166
Patent
active
060279494
ABSTRACT:
A P-type silicon substrate (4) and an N-type diffusion layer region (6) are connected to aluminum electrodes (5 and 7), respectively. Respective sections of the P-type silicon substrate (4) and the N-type diffusion layer region (6) are exposed. The aluminum electrode (5) connected to the P-type silicon substrate (4) and a platinum electrode (1) are connected in common to a cathode of a DC power supply (3a) and the aluminum electrode (7) connected to the N-type diffusion layer region (6) is connected to an anode of the DC power supply (3a). A sample for evaluation is thus provided. Of this sample, the exposed sections of the P-type silicon substrate (4) and the N-type diffusion layer region (6) are dipped into a mixture (2) of hydrofluoric acid and alcohol, and a voltage not lower than a critical voltage is applied thereto by the DC power supply (3a). Thus, an evaluation of a form of a diffusion layer region in a semiconductor device is achieved with excellent reproducibility.
REFERENCES:
patent: 2656496 (1953-10-01), Sparks
patent: 3379625 (1968-04-01), Csabi
patent: 3660250 (1972-05-01), Duffy et al.
patent: 3846259 (1974-11-01), Duncan et al.
patent: 4664762 (1987-05-01), Hirata
patent: 5338416 (1994-08-01), Mlcak et al.
patent: 5360521 (1994-11-01), Davis et al.
patent: 5464509 (1995-11-01), Mlcak et al.
patent: 5525549 (1996-06-01), Fukada et al.
J. A. M. Dikhoff, Philips Technische Rundschau, vol. 25, No. 12, pp. 441 to 454, "Inhomogenities in doped germanium and silicon crystals", 1963/64, (with partial English translation).
H. Foll, Appl. Phys. Lett, vol. 37, No. 3, pp. 316 to 318, "Anodic Etching of p-Type Silicon as a Method for Discriminating Electrically Active and Inactive Defects", Aug. 1, 1980.
G. A. James, et al., IBM Technical Disclosure Bulletin, vol. 14, No. 11, p. 3261, "Electrochemcial Method for the Measurement of Epitaxial Film Thickness", Apr. 1972.
Mitsubishi Denki & Kabushiki Kaisha
Tsai Jey
LandOfFree
Method for evaluating a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for evaluating a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for evaluating a semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-519869