Method for etching windows having different depths

Details Method for etching windows having different depths Method for etching windows having different depths

1989-10-12

1990-06-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437192, 437193, 437 56, 437 57, H01L 21265

Patent

active

049332970

ABSTRACT:
Overetching of gate runners, which may be silicided, during window etching is prevented by opening windows in the dielectric to expose the top of the silicide layer on the runners and then depositing a metal, such as tungsten, which has a high etch selectivity with respect to the dielectric. Etching can then continue to open windows which expose the source/drain regions without overetching of the gate runners because the etch used has high selectivity with respect to the dielectric and the metal.

REFERENCES:
patent: 3810795 (1974-05-01), Troutman
patent: 4382827 (1983-05-01), Romano-Moran et al.
patent: 4392150 (1983-07-01), Courreges
patent: 4442591 (1984-04-01), Haken
patent: 4455737 (1984-06-01), Godejahn
patent: 4628590 (1986-12-01), Udo et al.
patent: 4734383 (1988-03-01), Ikeda et al.

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