Method for etching upper metal of capacitator

Details Method for etching upper metal of capacitator Method for etching upper metal of capacitator

2008-04-29

2008-04-29

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S396000, C438S673000, C438S738000

Reexamination Certificate

active

07365020

ABSTRACT:
A method for etching an upper metal film of a capacitor, enables a safe etching of the upper metal film of a capacitor by exploiting an over-etch step. The method for etching the upper metal film of the capacitor includes the steps of forming a lower metal film, a lower nitride film, an upper metal film, and an upper nitride film on a substrate having a predetermined device formed thereon, and then forming a pattern thereover; etching the upper nitride film with CHF3, Ar and Cl2using the pattern; over etching the upper metal film more than 50% with CHF3, Ar and N2using the pattern; etching the upper metal film with CHF3, Ar and N2using the pattern; and etching the lower nitride film with CHF3and Ar using the pattern.

REFERENCES:
patent: 6380579 (2002-04-01), Nam et al.
patent: 6602434 (2003-08-01), Hung et al.
patent: 2004/0196618 (2004-10-01), Komuro et al.

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