Method for etching smooth sidewalls in III-V based compounds...

Details Method for etching smooth sidewalls in III-V based compounds... Method for etching smooth sidewalls in III-V based compounds...

2007-03-27

2007-03-27

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S718000, C216S067000

Reexamination Certificate

active

10692772

ABSTRACT:
III-V based compounds are etched to produce smooth sidewalls for electro-optical applications using BCl3together with chemistries of CH4and H2in RIE and/or ICP systems. HI or IBr or some combination of group VII gaseous species (Br, F, I) may be added in accordance with the invention.

REFERENCES:
patent: 5338394 (1994-08-01), Fathimulla et al.
patent: 5624529 (1997-04-01), Shul et al.
patent: 6034344 (2000-03-01), Ittleson et al.
patent: 6261962 (2001-07-01), Bhardwaj et al.
patent: 6635185 (2003-10-01), Demmin et al.
patent: 6893971 (2005-05-01), Tanabe et al.
patent: 2003/0066817 (2003-04-01), Tanabe et al.
Grover, Rohit, “Process Development of Methane-Hydrogen-Argon-Based Deep Dry Etching of InP High Aspect-Ratio Structures with Vertical Facet-Quality Sidewalls”, Journal of Vacuum Science Technology, B 19(5), Sep./Oct. 2001, pp. 1694-1698.
Chen, Hsin-Yi et al., “Inductively Coupled Plasma Etching of InP using Ch4/H2 and CH4/H2/N2”, Jounral of Vacuum Science Technology, B 20(1), Jan./Feb. 2002, pp. 47-52.
Hur, Katerina Y., et al., “Reacitve Ion Etching of InP Via Holes”, Jounral of Vacuum Science Technology, B 12(3), May/Jun. 1994, pp. 1410-1412.
Feupier, Y. et al., Influence of the Gas Mixture on the Reactive Ion Etching of InP in CH4-H2 Plasmas, Jounral of Vacuum Science Technology, B 15(5), Sep./Oct. 1997, pp. 1733-1740.
Kim DW, et al—“A Study of GaN Etching Characteristics Using HBr-Based Inductively Coupled Plasmas” Solid State Electronics, Elsevier Science Publishers, Barking, GB.
Pearton SJ, et al—“Dry Etching Characteristics of III-V Semiconductors in Microwave BCL3 Discharges” Plasma Chemistry and Plasma Processing, Plenum Press. New York, US—vol. 13, No. 2, Jun. 1, 1993.
Lee. et al—“Reactive Ion Etching of Vertical GaN Mesas by the Addition of C114 to BC13/H2/Ar Inductively Coupled Plasma”—Semiconductor Science and Technology , 10P, Bristol, GB. vol. 16. No. 6, Jun. 2001.
Langer JP, et al—“Electron Cyclotron Resonance Plasma Etching of GaSb in C12/BC13/Ch4/Ar/H2 at Room Temperature” Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, American Vacuum Society, New York, NY, US—vol. 21, No. 4, Jul. 2003.

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