Method for etching silicon wafers using a potassium hydroxide an

Details Method for etching silicon wafers using a potassium hydroxide an Method for etching silicon wafers using a potassium hydroxide an

1987-10-19

1988-07-19

Lacey, David L.

Compositions

Etching or brightening compositions

Alkali metal hydroxide containing

156662, 156647, 156657, C09K 1302

Patent

active

047583681

ABSTRACT:
A method for etching silicon wafers having a (100) or (110) crystallographic orientation. The method includes using an etching solution consisting essentially of potassium hydroxide (KOH) and water. This allows for an optimum combination of etch rate and etch quality.

REFERENCES:
patent: 4251383 (1981-02-01), Kemp
patent: 4314022 (1982-02-01), Fisch
patent: 4348254 (1982-09-01), Lindmayer
patent: 4426253 (1984-01-01), Kreuz et al.
patent: 4601779 (1986-07-01), Abernathy et al.
patent: 4639290 (1987-01-01), Leyden
Ace Scientific Catalog, East Brunswick, N.J., 1983, 1984 ed.

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