Etching a substrate: processes – Masking of a substrate using material resistant to an etchant
Patent
1995-01-24
1996-05-14
Powell, William
Etching a substrate: processes
Masking of a substrate using material resistant to an etchant
1566431, 1566561, 15665911, 216 57, 216 69, 216 75, 437245, 252 791, B44C 122, C23F 102
Patent
active
055159842
ABSTRACT:
A method for etching a Pt film of the present invention includes the steps of: forming an etching resistant film on a Pt film, followed by patterning; etching the Pt film by using as an etching mask the etching resistant film and by using, as an etching gas, a mixed gas containing oxygen gas and chlorine gas or chloride gas, during which layers made of PtCl.sub.x O.sub.y or a mixture containing PtCl.sub.x and PtO.sub.y are formed on side walls of the etching resistant film and the Pt film; and removing the layers made of PtCl.sub.x O.sub.y or the mixture containing PtCl.sub.x and PtO.sub.y with an acid by wet etching after the etching step.
REFERENCES:
patent: 5244536 (1993-09-01), Tani et al.
Kasumi et al, "PT Etching By Magnetron Plasma", The Japan Society of Applied Physics 30a-ZE-3 1993, with partial English translation.
Nishikawa et al, "Platinum Etching and Plasma Characteristics in RF Magnetron and Electron Cyclotron Resonance Plasmas", Jpn. J. Appl. Phys., vol. 32, pp. 6102-6108, Dec. 1993.
Ito Yasuyuki
Kudo Jun
Onishi Shigeo
Sakiyama Keizo
Yokoyama Seiichi
Powell William
Sharp Kabushiki Kaisha
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