Method for etching platinum

Details Method for etching platinum Method for etching platinum

1998-04-15

2000-06-20

Gulakowski, Randy

Etching a substrate: processes

Gas phase etching of substrate

Etching a multiple layered substrate where the etching...

216 47, 216 51, 216 75, 438738, B44C 122, H01L 21302

Patent

active

060774509

ABSTRACT:
A method for etching platinum in which used are an etch gas and a mask having a good etch ratio with platinum when a lower electrode is made of platinum is disclosed, including the steps of depositing a platinum layer on an insulator; depositing on the platinum layer a mask layer having a high selectivity with the platinum layer; patterning the mask layer to be spaced apart by a predetermined distance; and implanting an etch gas making an etch ratio of the platinum layer and the mask layer more than 2 to etch the platinum layer by using the mask layer.

REFERENCES:
patent: 5515984 (1996-05-01), Yokoyama et al.
patent: 5599424 (1997-02-01), Matsumoto et al.
patent: 5840200 (1998-11-01), Nakagawa et al.
patent: 5854104 (1998-12-01), Onishi et al.

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