Method for etching metal lines with enhanced profile control

Details Method for etching metal lines with enhanced profile control Method for etching metal lines with enhanced profile control

1997-06-06

1999-01-12

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

134 12, 438734, 438740, 438 16, H01L 21302

Patent

active

058588795

ABSTRACT:
The present invention discloses a method for enhancing profile control in a metal line etching process in which a main etching step and an over etching step are used by incorporating a charge neutralization step for the photoresist layer by an inert gas plasma such that plasma ions aimed at the horizontal surface on the semiconductor substrate is not distorted to bombard the sidewalls on the metal lines. The anisotropic etching of the metal lines is improved to provide metal lines on a device that has enhanced profile control and without the void or cavity defect.

REFERENCES:
patent: 5188980 (1993-02-01), Lai
patent: 5348619 (1994-09-01), Bohannon et al.
patent: 5702566 (1997-12-01), Tsui
"An Industrial Plasma Process for Avoiding Charge Effect"; J. Vac. Sci. Tech. B 12(6); 12-1994; pp. 3550-3554; Romand et. al.
"Recovery Phenomenon and Local Field Sensitivity On Wafer Charge-Up Effect of Magnetically Enhanced Reactive Ion Etch System"; Tsui et. al.; IEEE Electron Device Letters vol. 16, No. 2, Feb. 1995; pp. 64-66.

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