Method for etching mesa isolation in antimony-based compound...

Details Method for etching mesa isolation in antimony-based compound... Method for etching mesa isolation in antimony-based compound...

2006-11-14

2006-11-14

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S039000, C438S041000, C438S167000, C438S354000, C438S718000

Reexamination Certificate

active

07135411

ABSTRACT:
Antimony-based semiconductor devices are formed over a substrate structure (10) that includes an antimony-based buffer layer (24) and an antimony-based buffer cap (26). Multiple epitaxial layers (30–42) formed over the substrate structure (10) are dry etched to form device mesas (12) and the buffer cap (26) provides a desirably smooth mesa floor and electrical isolation around the mesas.

REFERENCES:
patent: 4640737 (1987-02-01), Nagasaka
patent: 5335241 (1994-08-01), Okumura et al.
patent: 6133593 (2000-10-01), Boos
patent: 6384432 (2002-05-01), Berenz
patent: 6703639 (2004-03-01), Yang et al.
patent: WO 2006/020355 (2006-02-01), None
A definition of the term “capping layer” from the USPTO manual of classification.
Kanji Yoh et al.; An InAs Channel Heterojunction Field-Effect Transistor with High Transconductance; IEEE Electron Device Letters; Nov. 1, 1990; pp. 526-528; vol. 11, No. 11, IEEE Service Center; New York, NY, US.

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