Method for etching low-k material using an oxide hard mask

Details Method for etching low-k material using an oxide hard mask Method for etching low-k material using an oxide hard mask

2011-05-24

2011-05-24

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S597000, C438S622000, C438S637000, C438S706000, C438S707000, C438S710000, C438S733000, C438S734000, C438S737000

Reexamination Certificate

active

07947609

ABSTRACT:
A method of patterning a film stack is described. The method comprises preparing a film stack on a substrate, wherein the film stack comprises a SiCOH-containing layer formed on the substrate, a silicon oxide (SiOx) layer formed on the SiCOH-containing layer, and a mask layer formed on the silicon oxide layer. A pattern is created in the mask layer. Thereafter, the pattern in the mask layer is transferred to the silicon oxide layer using an etching process, and then the mask layer is removed. The pattern in the silicon oxide layer is transferred to the SiCOH-containing layer using a dry plasma etching process formed from a process composition comprising NF3.

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