Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...
Patent
1997-02-21
1999-01-05
Utech, Benjamin
Cleaning and liquid contact with solids
Processes
Including application of electrical radiant or wave energy...
216 67, 216 75, B08B 600, B44C 122
Patent
active
058556893
ABSTRACT:
Disclosed is a method for etching the inside of a tungsten CVD reaction room, in which tungsten deposited on the inside of the reaction room by a film-forming gas when a tungsten CVD reaction is conducted is removed by plasma, and which has the steps of: exhausting a remainder of the film-forming gas in the reaction room; and then supplying a high-frequency electric power into the reaction room while keeping a predetermined degree of vacuum in the reaction room and leading a mixing gas of sulfur hexafluoride and oxygen into the reaction room to generate the plasma.
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"Selective Reactive Ion Etching of Tungsten Films in Fluorinated Gasses", Pan et al.; Abstract Only; 1987; Report: Gov. Rep. Announce, Index (U.S.), 87(22), Abstract, No. 751,096.
08-085885 Hitaoki et al., "Method for Cleaning Microwave Plasma Device", Patent Abstracts of Japan (1996) *Abstract*.
Goudreau George
NEC Corporation
Utech Benjamin
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