Method for etching III-V semiconductors and devices made by this

Details Method for etching III-V semiconductors and devices made by this Method for etching III-V semiconductors and devices made by this

1980-08-22

1983-09-06

Davie, James W.

357 22, H01L 2906, H01L 2980

Patent

active

044032412

ABSTRACT:
The use of an anisotropic etchant containing BCl.sub.3 and a source of atomic chlorine for III-V semiconductor materials has yielded improved results for semiconductor devices. For example, via gallium arsenide field effect transistors produced using this anisotropic etchant to fabricate via holes exhibit excellent electrical characteristics.

REFERENCES:
patent: 3986196 (1976-10-01), Decker et al.
patent: 4065742 (1977-12-01), Kendall et al.
patent: 4171234 (1979-10-01), Nagata et al.
S. Iida and K. Ito, "Selective Etching of Gallium Arsenide Crystals in H.sub.2 SO.sub.4 --H.sub.2 O.sub.2 --H.sub.2 O System", Journal of the Electrochemical Society, vol. 118, (1971), pp. 768-771.
D. W. Shaw, "Localized GaAs Etching with Acidic Hydrogen Peroxide Solutions", Journal of the Electrochemical Society, vol. 128, (1981), pp. 874-880.

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