Etching a substrate: processes – Gas phase etching of substrate – Etching inorganic substrate
Patent
1995-02-15
1998-07-07
Dang, Thi
Etching a substrate: processes
Gas phase etching of substrate
Etching inorganic substrate
H01L 213065
Patent
active
057763569
ABSTRACT:
A method for etching a ferroelectric film made of a compound containing lead of the present invention, includes the steps of: forming an insulating film, metal films, and a ferroelectric film on a substrate in this order; forming an etching resistant film on the ferroelectric film, followed by patterning; and etching the ferroelectric film with a mixed gas containing an inert gas and a halogen gas or a halogenated gas as an etching gas, using the patterned etching resistant film as an etching mask.
REFERENCES:
patent: 5382320 (1995-01-01), Desu et al.
patent: 5443688 (1995-08-01), Toure et al.
Glabbeek et al, "Reactive Ion etching of Pt/PbZr.sub.x Ti.sub.1-x O.sub.3 /Pt integrated ferroelectric capacitors", Ferroelectric Thin Films III Symposium, Mater. Res. Soc., xiii+500pp., pp. 127-132, 1993.
Poor et al, "Plasma Etching of PLT Thin Films and Bulk PLZT Using Fluorine-And Chlorine-Based Gases", Mat. Res. Soc. Symp. Proc., vol. 200, 1990.
Saito et al, "Reactive Ion Etching of Sputtered PbZr.sub.1 -xTi.sub.x O.sub.3 Thin Films", Jpn. J. Appl. Phys., vol. 31, L 1260-L 1262, 1992.
Lee et al, "Two-Dimensional Silicon/PLZT Spatial Light Modulators: Design Considerations and Technology", Optical Engineering, vol. 25, No. 2, pp. 250 and 255-260, Feb. 1986.
Vijay et al, "Reactive Ion Etching of Lead Zirconate Titanate (PZT) Thin Film Capacitors", J. Electrochem. Soc., vol. 140, No. 9, Sep. 1993.
Trolier et al, "Etched Piezoelectric Structures", Proc. Sixth IEEE Int. Symp. on Appl. of Ferroelectrics, 1986.
Itoh Yasuyuki
Kudo Jun
Onishi Shigeo
Sakiyama Keizo
Urashima Hitoshi
Dang Thi
Sharp Kabushiki Kaisha
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