Etching a substrate: processes – Nongaseous phase etching of substrate – Etching inorganic substrate
Patent
1998-04-06
2000-09-12
Gulakowski, Randy
Etching a substrate: processes
Nongaseous phase etching of substrate
Etching inorganic substrate
216 95, 438756, 438757, C23F 100
Patent
active
061173517
ABSTRACT:
A method for removing a plurality of dielectric films from a supporting substrate by providing a substrate with a second dielectric layer overlying a first dielectric layer, contacting the substrate at a first temperature with a first acid solution exhibiting a positive etch selectivity at the first temperature, and then contacting the substrate at a second temperature with a second acid solution exhibiting a positive etch selectivity at the second temperature. The first and second dielectric layers exhibit different etch rates in the first and second acid solutions. The first and second acid solutions may contain phosphoric acid. The first dielectric layer may be silicon nitride and the second dielectric layer may be silicon oxide. Under these conditions, the first temperature may be about 175.degree. C. and the second temperature may be about 155.degree. C.
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K. Sato, et al., Detailed Study of Silicon-Nitride-Etching Mechanism by Phosporic Acid for Advanced ULSI Processing (Abstract), Tohoku University--date unknown.
Li Li
Yates Don L.
Ahmed Shamim
Gulakowski Randy
Micro)n Technology, Inc.
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