Method for etching crystalline bodies

Etching a substrate: processes – Forming groove or hole in a substrate which is subsequently...

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1566251, 1566471, 1566621, 216 24, 216 83, 216 99, H01L 21302

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056393873

ABSTRACT:
A set of features, such as a pattern of V-grooves (20--20), can be precisely etched in a wafer (18) by patterning the V-grooves so that their axis of symmetry has a prescribed relationship with the axis of tilt (27) of the wafer surface (22).

REFERENCES:
patent: 4439268 (1984-03-01), Coldren et al.
patent: 4470875 (1984-09-01), Poteat
patent: 4737470 (1988-04-01), Bean
T.O. Townley, "Optimum Crystallographic Orientation for Silicon Device Fabrication," Solid State Technology, Jan. 1973, pp. 43-47.

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