Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1997-01-07
2000-03-21
Utech, Benjamin
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438714, 438723, 438725, H01L 21302
Patent
active
060402474
ABSTRACT:
A method for etching a contact for forming a contact hole having a sidewall profile with a single process by controlling a flow rate of carrier gas at an etcher having a mixture of gases, the mixture including CF.sub.4, a polymer forming gas and a carrier gas, including steps for forming an insulation layer on a substrate, exposing a portion of the insulation layer by providing a photoresist pattern on the insulation layer, etching the insulation layer to form the contact hole, the contact hole having a sloped sidewall. The step of etching the insulation layer includes the steps of, introducing a plurality of gases into an etching chamber, the plurality of gases including a first gas including CF.sub.4, a second gas including a polymer forming gas, and a third gas including a balance gas and controlling a flow rate into the etching chamber of the balance gas, and removing the photoresist pattern from the insulation layer.
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Goudreau George
LG Semicon Co. Ltd.
Utech Benjamin
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