Etching a substrate: processes – Forming or treating mask used for its nonetching function
Reexamination Certificate
2004-04-06
2009-08-18
Olsen, Allan (Department: 1792)
Etching a substrate: processes
Forming or treating mask used for its nonetching function
C216S041000, C216S046000, C216S067000, C216S075000
Reexamination Certificate
active
07575692
ABSTRACT:
An object to be processed has a chromium-based thin film made of a material containing chromium. The thin film is etched using a resist pattern as a mask. The thin film is etched by the use of a chemical species produced by preparing a dry etching gas containing a halogen-containing gas and an oxygen-containing gas and supplying a plasma excitation power to the dry etching gas to thereby excite plasma. The thin film is etched using, as the plasma excitation power, a power lower than a plasma excitation power at which plasma density jump occurs.
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Hoya Corporation
Olsen Allan
Sughrue & Mion, PLLC
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