Method for etching boron nitride

Details Method for etching boron nitride Method for etching boron nitride

1995-01-03

1996-07-16

Hearn, Brian E.

Etching a substrate: processes

Nongaseous phase etching of substrate

Etching inorganic substrate

437236, 437241, 148DIG113, H01L 213115

Patent

active

055363601

ABSTRACT:
The subject invention provides a method of enhancing the etch rate of boron nitride which comprises doping a layer of boron nitride with an element from Group IVA of the Periodic Table of the Elements, such as silicon, carbon, or germanium. The doped boron nitride layer can be wet etched at a faster rate with hot phosphoric acid than was possible prior to doping the boron nitride.

REFERENCES:
patent: 3785891 (1974-01-01), Vrieze et al.
patent: 4057895 (1977-11-01), Ghezzo
patent: 4293373 (1981-10-01), Greenwood
patent: 4514251 (1985-04-01), van Ommen et al.
patent: 4875967 (1989-10-01), Mishima et al.
patent: 4952446 (1990-08-01), Lee et al.
patent: 5043219 (1991-08-01), Yoshida et al.
patent: 5217567 (1993-06-01), Cote et al.
patent: 5227318 (1993-07-01), Doll et al.
Wolf et al, "Silicon Processing for the VLSI Era"; vol. 1, 1986, pp. 532-534.
Ghandi, "VLSI Fabrication Principles", Silicon and Gallium Arsenide, 1983, pp. 495-497.
K. Shohno, et al., Surface Passivation CVD-BN Film Applied To Master Slice p-MOS IC, Extended Abstracts (vol. 79-2) of The Electrochemical Socient, Abstract No. 413, pp. 1046-1047 (1979).
Masahiko Maeda, et al., A Low-Permittivity Interconnection Using an SiBN Interlayer, IEEE Transactions on Electron Devices 36: 1610-1614 (1989).
Masahiko Maeda, et al., Low Dielectric Constant Amorphous SiBN Ternary Films Prepared by Plasma-Enhanced Deposition, Japanese Journal of Applied Physics 26: 660-665 (1987).

Affiliated with

Also associated with

Rating

Method for etching boron nitride does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for etching boron nitride, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for etching boron nitride will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1782070